2SC1847 GP BJT

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  • 256 MATASHITA
  • 2540 NEW JERSEY SEMICONDUCTOR
  • 8 WORLD WIDE

Trans GP BJT NPN 40V 1.5A 3-Pin TO-126B-A1

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 1@0.2A@2A V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1200 mW
Maximum Transition Frequency 150(Typ) MHz
Type NPN