2SC1906 GP BJT

default part image

Datasheet: View

Stock

  • 5065 HITACHI
  • 1639 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 19V 0.05A 3-Pin TO-92

Request For Quote
Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 1@4mA@20mA V
Maximum Collector Emitter Voltage 19 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 2 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 300 mW
Maximum Transition Frequency 1000(Typ) MHz
Type NPN