2SC2120 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR
  • 1601 TOSHIBA

Trans GP BJT NPN 30V 0.8A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 35 V
Maximum Collector Emitter Saturation Voltage 0.5@20mA@500mA V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 600 mW
Maximum Transition Frequency 120(Typ) MHz
Type NPN