2SC2166 RF BJT
Datasheet: View
Stock
- 2 MITSIBISHI
- 2310 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 75 | V |
| Maximum Collector Emitter Voltage | 75 | V |
| Maximum DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 35@0.1A@10V | |
| Number of Elements per Chip | 1 | |
| Output Power | 7.5(Typ) | W |
| Type | NPN |