2SC2229 GP BJT

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  • 1825 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 150V 0.05A 3-Pin TO-92 Mod

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 200 V
Maximum Collector Emitter Saturation Voltage 0.5@1mA@10mA V
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 800 mW
Maximum Transition Frequency 120(Typ) MHz
Type NPN