2SC2235 GP BJT

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  • 803 NEW JERSEY SEMICONDUCTOR
  • 30087 TOSHIBA

Trans GP BJT NPN 120V 0.8A 3-Pin TO-92 Mod

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 1@50mA@500mA V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 0.8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 900 mW
Maximum Transition Frequency 120(Typ) MHz
Type NPN