2SC2274 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR
  • 2590 SANKEN
  • 67 SANYO

Trans GP BJT NPN 50V 0.5A 3-Pin NP

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.6@40mA@400mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 600 mW
Maximum Transition Frequency 120(Typ) MHz
Type NPN