2SC2335 GP BJT
Datasheet: View
Stock
- 3963 NEW JERSEY SEMICONDUCTOR
- 31 NIPPON SEMI
- 14 SAMSUNG
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 500 | V |
| Maximum Collector Emitter Saturation Voltage | 1@600mA@3A | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Type | NPN |