2SC2577 GP BJT

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  • 3315 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 6A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 1.5@0.2A@2A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 60000 mW
Maximum Transition Frequency 20(Typ) MHz
Type NPN