2SC2578 GP BJT

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  • 4152 NEW JERSEY SEMICONDUCTOR
  • 155 SANKEN

Trans GP BJT NPN 140V 7A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 140 V
Maximum Collector Emitter Saturation Voltage 1.5@0.3A@3A V
Maximum Collector Emitter Voltage 140 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 70000 mW
Maximum Transition Frequency 20(Typ) MHz
Type NPN