2SC2594 GP BJT

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  • 2748 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 20V 5A 3-Pin TO-126A-A1

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 1@0.1A@3A V
Maximum Collector Emitter Voltage 20 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 10000 mW
Maximum Transition Frequency 150(Typ) MHz
Type NPN