2SC2625 GP BJT

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  • 63 FUJI
  • 2536 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 10A 3-Pin(3+Tab) TO-3P

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 450 V
Maximum Collector Emitter Saturation Voltage 1.2@0.8A@4A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 80000 mW
Type NPN