2SC2669 GP BJT

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  • 38 NEW JERSEY SEMICONDUCTOR
  • 10 NIPPON SEMI
  • 11 WORLD WIDE

Trans GP BJT NPN 30V 0.05A 3-Pin Mini

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 35 V
Maximum Collector Emitter Saturation Voltage 0.4@1mA@10mA V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 125 °C
Maximum Power Dissipation 200 mW
Maximum Transition Frequency 100(Min) MHz
Type NPN