2SC2690 GP BJT

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  • 2147 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 120V 1.2A 3-Pin TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 0.7@0.2A@1A V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 1.2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1200 mW
Maximum Transition Frequency 175(Typ) MHz
Type NPN