2SC2716 RF BJT

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  • 356 NEW JERSEY SEMICONDUCTOR

Trans RF BJT NPN 30V 0.1A 3-Pin S-Mini

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Features Values Unit
Maximum Base Emitter Saturation Voltage 1@1mA@10mA V
Maximum Collector Base Voltage 35 V
Maximum Collector Cut-Off Current 100 nA
Maximum Collector Emitter Saturation Voltage 0.4@1mA@10mA V
Maximum Collector Emitter Voltage 30 V
Maximum Collector Emitter Voltage Range 30 to 40 V
Maximum DC Collector Current 0.1 A
Maximum DC Collector Current Range 0.06 to 0.12 A
Maximum Emitter Base Voltage 4 V
Maximum Emitter Cut-Off Current 1000 nA