2SC2752 GP BJT

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  • 2547 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 0.5A 3-Pin TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 500 V
Maximum Collector Emitter Saturation Voltage 1@0.06A@0.3A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Type NPN