2SC2873 GP BJT

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  • 44 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 50V 2A 4-Pin(3+Tab) PW-Mini

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Features Values Unit
Category Bipolar Small Signal
Configuration Single Dual Collector
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.5@0.05A@1A V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 120(Typ) MHz
Type NPN