2SC2911 GP BJT

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  • 2275 NEW JERSEY SEMICONDUCTOR
  • 375 SANYO

Trans GP BJT NPN 160V 0.014A 3-Pin TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 180 V
Maximum Collector Emitter Saturation Voltage 0.3@5mA@50mA V
Maximum Collector Emitter Voltage 160 V
Maximum DC Collector Current 0.014 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 150(Typ) MHz
Type NPN