2SC2914 GP BJT

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  • 2794 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 10A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 500 V
Maximum Collector Emitter Saturation Voltage 1@2A@10A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 120000 mW
Type NPN