2SC2929 GP BJT

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  • 328 FUJI
  • 3701 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 3A 3-Pin(3+Tab) TO-220AB T/R

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 450 V
Maximum Collector Emitter Saturation Voltage 0.3@0.2A@1A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 40000 mW
Type NPN