2SC2958 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR
  • 65 NIPPON SEMI

Trans GP BJT NPN 140V 0.5A 3-Pin SP-8

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 160 V
Maximum Collector Emitter Saturation Voltage 0.7@0.2A@1A V
Maximum Collector Emitter Voltage 140 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 60(Typ) MHz
Type NPN