2SC3063 GP BJT

default part image

Datasheet: View

Stock

  • 2574 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 300V 0.1A 3-Pin TO-126B-A1

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 300 V
Maximum Collector Emitter Saturation Voltage 1.5@3mA@30mA V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1200 mW
Maximum Transition Frequency 140(Typ) MHz
Type NPN