2SC3087 GP BJT

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  • 2363 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 500V 5A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 800 V
Maximum Collector Emitter Saturation Voltage 1@0.6A@3A V
Maximum Collector Emitter Voltage 500 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1750 mW
Maximum Transition Frequency 18(Typ) MHz
Type NPN