2SC3116 GP BJT

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  • 22 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 160V 0.7A 3-Pin TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 180 V
Maximum Collector Emitter Saturation Voltage 0.4@25mA@250mA V
Maximum Collector Emitter Voltage 160 V
Maximum DC Collector Current 0.7 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 120(Typ) MHz
Type NPN