2SC3150 GP BJT
Datasheet: View
Stock
- 2407 NEW JERSEY SEMICONDUCTOR
- 2 NIPPON SEMI
- 128 RFGAIN
- 169 SANYO
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 900 | V |
| Maximum Collector Emitter Saturation Voltage | 2@0.3A@1.5A | V |
| Maximum Collector Emitter Voltage | 800 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 50000 | mW |
| Maximum Transition Frequency | 15(Typ) | MHz |
| Type | NPN |