2SC3153 GP BJT

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  • 26 HITACHI
  • 2156 NEW JERSEY SEMICONDUCTOR
  • 217 SANYO

Trans GP BJT NPN 800V 6A 3-Pin(3+Tab) TO-3PB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 900 V
Maximum Collector Emitter Saturation Voltage 2@0.6A@3A V
Maximum Collector Emitter Voltage 800 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 100 mW
Maximum Transition Frequency 15(Typ) MHz
Type NPN