2SC3220 GP BJT

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  • 3958 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 230V 10A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 230 V
Maximum Collector Emitter Saturation Voltage 1@0.5A@5A V
Maximum Collector Emitter Voltage 230 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 80000 mW
Maximum Transition Frequency 20(Typ) MHz
Type NPN