2SC3446 GP BJT

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  • 3314 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 500V 3A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 800 V
Maximum Collector Emitter Saturation Voltage 1@0.3A@1.5A V
Maximum Collector Emitter Voltage 500 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 18(Typ) MHz
Type NPN