2SC3506 GP BJT
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- 3659 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 800V 3A 3-Pin TOP-3F-A1
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 1000 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@0.4A@2A | V |
| Maximum Collector Emitter Voltage | 800 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 3000 | mW |
| Maximum Transition Frequency | 4(Typ) | MHz |
| Type | NPN |