Datasheet: View
Features | Values | Unit |
---|---|---|
Configuration | Single Dual Emitter | |
Material | Si | |
Maximum Collector Base Voltage | 20 | V |
Maximum Collector Emitter Voltage | 10 | V |
Maximum DC Collector Current | 0.065 | A |
Maximum Emitter Base Voltage | 1.5 | V |
Maximum Operating Temperature | 200 | °C |
Maximum Transition Frequency | 8000(Typ) | MHz |
Minimum DC Current Gain | 50@20mA@8V | |
Minimum Operating Temperature | -65 | °C |
Number of Elements per Chip | 1 | |
Type | NPN |