2SC3604 RF BJT

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  • 1 NIPPON SEMI

Trans GP BJT NPN 10V 0.065A 4-Pin Micro-X

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Features Values Unit
Configuration Single Dual Emitter
Material Si
Maximum Collector Base Voltage 20 V
Maximum Collector Emitter Voltage 10 V
Maximum DC Collector Current 0.065 A
Maximum Emitter Base Voltage 1.5 V
Maximum Operating Temperature 200 °C
Maximum Transition Frequency 8000(Typ) MHz
Minimum DC Current Gain 50@20mA@8V
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Type NPN