2SC3619 GP BJT

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  • 3564 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 300V 0.1A 3-Pin(3+Tab) TO-126IS

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 300 V
Maximum Collector Emitter Saturation Voltage 1@1mA@10mA V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1500 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN