2SC3748 GP BJT

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  • 3598 NEW JERSEY SEMICONDUCTOR
  • 1900 SANYO

Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) TO-220ML

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.4@0.25A@5A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 100(Typ) MHz
Type NPN