2SC3790 GP BJT

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  • 3821 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 300V 0.1A 3-Pin TO-126ML

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 300 V
Maximum Collector Emitter Saturation Voltage 0.6@2mA@20mA V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1500 mW
Maximum Transition Frequency 150(Typ) MHz
Type NPN