2SC3832 GP BJT

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  • 3625 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 7A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 500 V
Maximum Collector Emitter Saturation Voltage 0.5@0.6A@3A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 50000 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN