2SC3834 GP BJT

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  • 4528 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 120V 7A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 200 V
Maximum Collector Emitter Saturation Voltage 0.5@0.3A@3A V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 8 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 50000 mW
Maximum Transition Frequency 30(Typ) MHz
Type NPN