2SC3902 GP BJT

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  • 3265 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 160V 1.5A 3-Pin TO-126ML

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 180 V
Maximum Collector Emitter Saturation Voltage 0.45@50mA@500mA V
Maximum Collector Emitter Voltage 160 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1500 mW
Maximum Transition Frequency 120(Typ) MHz
Type NPN