2SC3943 GP BJT

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  • 500 MATASHITA
  • 1000 NEW JERSEY SEMICONDUCTOR
  • 6000 PANASONIC

Trans GP BJT NPN 50V 0.15A 3-Pin(3+Tab) TO-220F-A1

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 110 V
Maximum Collector Emitter Saturation Voltage 0.5@15mA@150mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 0.15 A
Maximum Emitter Base Voltage 3.5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 350(Typ) MHz
Type NPN