2SC3956 GP BJT

default part image

Datasheet: View

Stock

  • 3625 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 200V 0.2A 3-Pin TO-126ML

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 200 V
Maximum Collector Emitter Saturation Voltage 1@3mA@30mA V
Maximum Collector Emitter Voltage 200 V
Maximum DC Collector Current 0.2 A
Maximum Emitter Base Voltage 3 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1300 mW
Maximum Transition Frequency 300(Typ) MHz
Type NPN