2SC4008 GP BJT

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  • 3625 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220FP

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Features Values Unit
Category Bipolar Power
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1@0.2A@2A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN