2SC4029 GP BJT

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  • 3654 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 230V 20A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 230 V
Maximum Collector Emitter Saturation Voltage 3@0.8A@8A V
Maximum Collector Emitter Voltage 230 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 30(Typ) MHz
Type NPN