2SC4059 GP BJT

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  • 3674 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 450V 15A 3-Pin(3+Tab) TO-247

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 600 V
Maximum Collector Emitter Saturation Voltage 1@1.5A@7.5A V
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 130000 mW
Type NPN