2SC4110 GP BJT

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  • 2366 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 25A 3-Pin(3+Tab) TO-3PB

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 500 V
Maximum Collector Emitter Saturation Voltage 0.8@3.2A@16A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 25 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2500 mW
Maximum Transition Frequency 20(Typ) MHz
Type NPN