2SC4448 GP BJT
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- 2417 NEW JERSEY SEMICONDUCTOR
- 23 TOSHIBA
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 250 | V |
| Maximum Collector Emitter Saturation Voltage | 1@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum DC Collector Current | 0.15 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Maximum Transition Frequency | 240(Typ) | MHz |
| Type | NPN |