2SC4518 GP BJT

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  • 3415 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 550V 5A 3-Pin(3+Tab) TO-220F

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 900 V
Maximum Collector Emitter Saturation Voltage 0.5@0.36A@1.8A V
Maximum Collector Emitter Voltage 550 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 35000 mW
Maximum Transition Frequency 6(Typ) MHz
Type NPN