2SC4580 GP BJT

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  • 2574 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) ITO-3P

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 600 V
Maximum Collector Emitter Saturation Voltage 1@0.8A@4A V
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 50000 mW
Maximum Transition Frequency 20 MHz
Type NPN