2SC4585 GP BJT

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  • 3958 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 800V 10A 3-Pin(3+Tab) ITO-3P

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 1200 V
Maximum Collector Emitter Saturation Voltage 1@1A@5A V
Maximum Collector Emitter Voltage 800 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 85000 mW
Maximum Transition Frequency 8(Typ) MHz
Type NPN