2SC461 GP BJT

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  • 1205 HITACHI
  • 9000 HITACHI
  • 875 NEW JERSEY SEMICONDUCTOR
  • 5 WORLD WIDE

Trans GP BJT NPN 30V 0.1A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 1.1@1mA@10mA V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 200 mW
Maximum Transition Frequency 230(Typ) MHz
Type NPN