2SC4689 GP BJT

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  • 3521 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 120V 8A 3-Pin(3+Tab) TO-3P(N)IS

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 2@0.6A@6A V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 70000 mW
Maximum Transition Frequency 30(Typ) MHz
Type NPN