2SC4886 GP BJT

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  • 5632 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 150V 8A 3-Pin(3+Tab) TO-3PF

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Saturation Voltage 2@500mA@5A V
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 80000 mW
Maximum Transition Frequency 60(Typ) MHz
Type NPN