2SC4941 GP BJT

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  • 2458 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 800V 6A 3-Pin(3+Tab) ITO-3P

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 1500 V
Maximum Collector Emitter Saturation Voltage 0.5@0.6A@3A V
Maximum Collector Emitter Voltage 800 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 65000 mW
Maximum Transition Frequency 8(Typ) MHz
Type NPN