2SC4941 GP BJT
Datasheet: View
Stock
- 2458 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 1500 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@0.6A@3A | V |
| Maximum Collector Emitter Voltage | 800 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 65000 | mW |
| Maximum Transition Frequency | 8(Typ) | MHz |
| Type | NPN |